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IPI50N10S3L16AKSA1 Tech Specifications

MOSFET N-CH 100V 50A TO262-3

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2008
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 100W Tc
Turn On Delay Time 10 ns
Rds On (Max) @ Id, Vgs 15.7m Ω @ 50A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 50A Tc
Rise Time 5ns
Vgs (Max) ±20V
Continuous Drain Current (ID) 50A
Max Dual Supply Voltage 100V
Pulsed Drain Current-Max (IDM) 200A
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material SILICON
Packaging Tube
Series OptiMOS™
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Reach Compliance Code not_compliant
Reference Standard AEC-Q101
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Vgs(th) (Max) @ Id 2.4V @ 60μA
Input Capacitance (Ciss) (Max) @ Vds 4180pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Turn-Off Delay Time 28 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0209Ohm
RoHS Status ROHS3 Compliant
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