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IPI50R140CP Tech Specifications

MOSFET N-CH 550V 23A TO262-3

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Operating Temperature -55°C~150°C TJ
Published 2007
Part Status Obsolete
Termination Through Hole
Power Dissipation-Max 192W Tc
Power Dissipation 192W
FET Type N-Channel
Vgs(th) (Max) @ Id 3.5V @ 930μA
Input Capacitance (Ciss) (Max) @ Vds 2540pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 8 ns
Continuous Drain Current (ID) 23A
Max Dual Supply Voltage 500V
Dual Supply Voltage 550V
Radiation Hardening No
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Number of Pins 3
Packaging Tube
Series CoolMOS™
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Element Configuration Single
Turn On Delay Time 35 ns
Rds On (Max) @ Id, Vgs 140m Ω @ 14A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 23A Tc
Rise Time 14ns
Vgs (Max) ±20V
Turn-Off Delay Time 80 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 500V
Nominal Vgs 3 V
REACH SVHC No SVHC
Lead Free Lead Free
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IPI50R140CP Documents

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