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IPL60R104C7AUMA1 Tech Specifications

N-Channel 600 V 104 mOhm 42 nC Surface Mount CoolMOS? Power Mosfet - VSON-4

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Number of Pins 4
Operating Temperature -40°C~150°C TJ
Published 2008
JESD-609 Code e3
Part Status Active
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Form NO LEAD
Reach Compliance Code not_compliant
Number of Elements 1
Power Dissipation-Max 122W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 490μA
Input Capacitance (Ciss) (Max) @ Vds 1819pF @ 400V
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Vgs (Max) ±20V
Max Dual Supply Voltage 600V
Avalanche Energy Rating (Eas) 97 mJ
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 4-PowerTSFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series CoolMOS™ C7
Pbfree Code yes
Moisture Sensitivity Level (MSL) 2A (4 Weeks)
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 104m Ω @ 9.7A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 20A Tc
Drive Voltage (Max Rds On,Min Rds On) 10V
Continuous Drain Current (ID) 20A
Pulsed Drain Current-Max (IDM) 83A
RoHS Status ROHS3 Compliant
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