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IPP120N08S403AKSA1 Tech Specifications

MOSFET N-CH TO220-3

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2013
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Reach Compliance Code not_compliant
Number of Elements 1
Number of Channels 1
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 223μA
Input Capacitance (Ciss) (Max) @ Vds 11550pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 167nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 50 ns
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0028Ohm
Pulsed Drain Current-Max (IDM) 480A
Max Junction Temperature (Tj) 175°C
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series Automotive, AEC-Q101, OptiMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 278W Tc
Power Dissipation 278W
Turn On Delay Time 30 ns
Rds On (Max) @ Id, Vgs 2.8m Ω @ 100A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 120A Tc
Rise Time 15ns
Vgs (Max) ±20V
Turn-Off Delay Time 60 ns
JEDEC-95 Code TO-220AB
Max Dual Supply Voltage 80V
Drain to Source Breakdown Voltage 80V
Avalanche Energy Rating (Eas) 920 mJ
Height 20.7mm
Lead Free Contains Lead
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