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IRF520NSPBF Tech Specifications

MOSFET N-CH 100V 9.7A D2PAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Published 2004
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 175°C
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC 100V
Terminal Form GULL WING
Current Rating 9.7A
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 3.8W Ta 48W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 200m Ω @ 5.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 23 ns
Continuous Drain Current (ID) 9.7A
Gate to Source Voltage (Vgs) 20V
Recovery Time 150 ns
Height 4.826mm
Width 10.16mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Packaging Tube
Series HEXFET®
Part Status Discontinued
Number of Terminations 2
Resistance 200mOhm
Min Operating Temperature -55°C
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 48W
Turn On Delay Time 4.5 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 9.7A Tc
Rise Time 23ns
Vgs (Max) ±20V
Turn-Off Delay Time 32 ns
Threshold Voltage 4V
Drain to Source Breakdown Voltage 100V
Nominal Vgs 4 V
Length 10.668mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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IRF520NSPBF Documents

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