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IRF6898MTRPBF Tech Specifications

MOSFET N-CH 25V 35A DIRECTFET

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Number of Pins 7
Operating Temperature -40°C~150°C TJ
Published 2012
Part Status Last Time Buy
Number of Terminations 3
Subcategory FET General Purpose Power
Terminal Position BOTTOM
Number of Elements 1
Power Dissipation-Max 2.1W Ta 78W Tc
Power Dissipation 78W
Turn On Delay Time 18 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.1V @ 100μA
Current - Continuous Drain (Id) @ 25°C 35A Ta 213A Tc
Rise Time 46ns
Vgs (Max) ±16V
Turn-Off Delay Time 24 ns
Threshold Voltage 1.6V
Drain to Source Breakdown Voltage 25V
FET Feature Schottky Diode (Body)
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case DirectFET™ Isometric MX
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
JESD-30 Code R-XBCC-N3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.1m Ω @ 35A, 10V
Input Capacitance (Ciss) (Max) @ Vds 5435pF @ 13V
Gate Charge (Qg) (Max) @ Vgs 62nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 19 ns
Continuous Drain Current (ID) 35A
Gate to Source Voltage (Vgs) 16V
Pulsed Drain Current-Max (IDM) 280A
Radiation Hardening No
RoHS Status ROHS3 Compliant
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