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IRF8301MTRPBF Tech Specifications

IRF8301MTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 7
Operating Temperature -40°C~150°C TJ
Published 2013
Part Status Active
Number of Terminations 3
Additional Feature ULTRA LOW RESISTANCE
Technology MOSFET (Metal Oxide)
JESD-30 Code R-XBCC-N3
Number of Channels 1
Element Configuration Single
Power Dissipation 2.8W
Turn On Delay Time 20 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.35V @ 150μA
Current - Continuous Drain (Id) @ 25°C 34A Ta 192A Tc
Rise Time 30ns
Vgs (Max) ±20V
Turn-Off Delay Time 25 ns
Threshold Voltage 1.7V
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 260 mJ
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case DirectFET™ Isometric MT
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position BOTTOM
Number of Elements 1
Power Dissipation-Max 2.8W Ta 89W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.5m Ω @ 32A, 10V
Input Capacitance (Ciss) (Max) @ Vds 6140pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 77nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 17 ns
Continuous Drain Current (ID) 34A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 250A
Radiation Hardening No
RoHS Status ROHS3 Compliant
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IRF8301MTRPBF Documents

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