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IRF8302MTRPBF Tech Specifications

MOSFET N-CH 30V 31A MX

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 7
Manufacturer Package Identifier MG-WDSON-5
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Technology MOSFET (Metal Oxide)
JESD-30 Code R-XBCC-N3
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 104W Tc
Power Dissipation 2.8W
Turn On Delay Time 22 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.35V @ 150μA
Current - Continuous Drain (Id) @ 25°C 31A Ta 190A Tc
Rise Time 37ns
Vgs (Max) ±20V
Turn-Off Delay Time 20 ns
Threshold Voltage 1.35V
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 260 mJ
Height 700μm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case DirectFET™ Isometric MX
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Published 2006
JESD-609 Code e1
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position BOTTOM
Number of Elements 1
Number of Channels 1
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.8m Ω @ 31A, 10V
Input Capacitance (Ciss) (Max) @ Vds 6030pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 53nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 15 ns
Continuous Drain Current (ID) 31A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 250A
Max Junction Temperature (Tj) 150°C
Radiation Hardening No
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