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IRFH5025TRPBF Tech Specifications

INFINEON IRFH5025TRPBF MOSFET Transistor, N Channel, 25 A, 250 V, 0.084 ohm, 10 V, 5 VNew

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2012
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position DUAL
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation-Max 3.6W Ta 8.3W Tc
Power Dissipation 3.6W
Turn On Delay Time 9 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 150μA
Current - Continuous Drain (Id) @ 25°C 3.8A Ta
Rise Time 6.3ns
Vgs (Max) ±20V
Turn-Off Delay Time 17 ns
Threshold Voltage 5V
Drain to Source Breakdown Voltage 250V
Avalanche Energy Rating (Eas) 320 mJ
Length 5.9944mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-PowerVDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 5
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-PDSO-N5
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 100m Ω @ 5.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2150pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 6.1 ns
Continuous Drain Current (ID) 32A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 46A
Height 838.2μm
Width 5mm
REACH SVHC No SVHC
Lead Free Lead Free
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IRFH5025TRPBF Documents

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