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IRFI4110GPBF Tech Specifications

IRFI4110GPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2008
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Number of Elements 1
Element Configuration Single
Power Dissipation 61W
Turn On Delay Time 24 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 72A Tc
Rise Time 58ns
Vgs (Max) ±20V
Turn-Off Delay Time 81 ns
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 290A
Height 16.13mm
Width 4.83mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3 Full Pack
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Resistance 4.5MOhm
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 61W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.5m Ω @ 43A, 10V
Input Capacitance (Ciss) (Max) @ Vds 9540pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 290nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 71 ns
Continuous Drain Current (ID) 72A
JEDEC-95 Code TO-220AB
Drain to Source Breakdown Voltage 100V
Nominal Vgs 4 V
Length 10.75mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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IRFI4110GPBF Documents

Download datasheets and manufacturer documentation for IRFI4110GPBF

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