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IRFI4229PBF Tech Specifications

MOSFET N-CH 250V 19A TO-220FP

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -40°C~150°C TJ
Published 2008
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) 260
Number of Elements 1
Element Configuration Single
Power Dissipation 46W
Turn On Delay Time 18 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 19A Tc
Rise Time 17ns
Vgs (Max) ±30V
Turn-Off Delay Time 32 ns
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.046Ohm
Pulsed Drain Current-Max (IDM) 72A
Height 9.8mm
Width 4.83mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Active
Number of Terminations 3
Terminal Finish MATTE TIN OVER NICKEL
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) 40
Power Dissipation-Max 46W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 46m Ω @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4480pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 13 ns
Continuous Drain Current (ID) 19A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 250V
Avalanche Energy Rating (Eas) 110 mJ
Length 10.63mm
Radiation Hardening No
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