IRFI4321PBF Tech Specifications

IRFI4321PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2006
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 34A
Number of Elements 1
Element Configuration Single
Power Dissipation 46W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 16m Ω @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4440pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 20 ns
Continuous Drain Current (ID) 34A
JEDEC-95 Code TO-220AB
Drain to Source Breakdown Voltage 150V
Length 10.6172mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3 Full Pack
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Active
Number of Terminations 3
Terminal Finish MATTE TIN OVER NICKEL
Voltage - Rated DC 150V
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Power Dissipation-Max 46W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 18 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 34A Tc
Rise Time 29ns
Vgs (Max) ±30V
Turn-Off Delay Time 27 ns
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Height 9.8mm
Width 4.826mm
REACH SVHC No SVHC
Lead Free Lead Free
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