IRFP064NPBF Tech Specifications

In a Tube of 25, N-Channel MOSFET, 110 A, 55 V, 3-Pin TO-247AC Infineon IRFP064NPBF

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 1997
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Voltage - Rated DC 55V
Current Rating 110A
Number of Elements 1
Power Dissipation-Max 200W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8m Ω @ 59A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 70 ns
Continuous Drain Current (ID) 110A
JEDEC-95 Code TO-247AC
Drain Current-Max (Abs) (ID) 98A
Dual Supply Voltage 55V
Recovery Time 170 ns
Nominal Vgs 4 V
Length 15.875mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Resistance 8MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Lead Pitch 5.45mm
Number of Channels 1
Element Configuration Single
Power Dissipation 150W
Turn On Delay Time 14 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 110A Tc
Rise Time 100ns
Vgs (Max) ±20V
Turn-Off Delay Time 43 ns
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Avalanche Energy Rating (Eas) 480 mJ
Max Junction Temperature (Tj) 175°C
Height 24.99mm
Width 5.3mm
REACH SVHC No SVHC
Lead Free Lead Free
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