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IRFR7740TRPBF Tech Specifications

MOSFET N-CH 75V 87A D2PAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Number of Channels 1
Element Configuration Single
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.2m Ω @ 52A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4430pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 126nC @ 10V
Drain to Source Voltage (Vdss) 75V
Vgs (Max) ±20V
Turn-Off Delay Time 55 ns
Threshold Voltage 3.7V
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 75V
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 3.949996g
Operating Temperature -55°C~175°C TJ
Published 2004
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 140W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 10 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.7V @ 100μA
Current - Continuous Drain (Id) @ 25°C 87A Tc
Rise Time 36ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Fall Time (Typ) 30 ns
Continuous Drain Current (ID) 87A
JEDEC-95 Code TO-252AA
Drain-source On Resistance-Max 0.0072Ohm
Avalanche Energy Rating (Eas) 242 mJ
RoHS Status ROHS3 Compliant
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IRFR7740TRPBF Documents

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