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IRFU4510PBF Tech Specifications

MOSFET N CH 100V 56A IPAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2012
Part Status Active
Number of Terminations 3
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Power Dissipation 143W
Turn On Delay Time 18 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 100μA
Current - Continuous Drain (Id) @ 25°C 56A Tc
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 34 ns
Continuous Drain Current (ID) 56A
Drain to Source Breakdown Voltage 100V
Nominal Vgs 3 V
Length 6.73mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 143W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13.9m Ω @ 38A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3031pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 81nC @ 10V
Vgs (Max) ±20V
Turn-Off Delay Time 42 ns
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 252A
Height 6.22mm
Width 2.39mm
RoHS Status ROHS3 Compliant
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IRFU4510PBF Documents

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