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IRGB4064DPBF Tech Specifications

IGBT 600V 20A 101W TO220AB

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 99 Weeks
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Part Status Obsolete
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 101W
Element Configuration Single
Case Connection COLLECTOR
Turn On Delay Time 27 ns
Rise Time 15ns
Turn-Off Delay Time 79 ns
Max Collector Current 20A
JEDEC-95 Code TO-220AB
Collector Emitter Saturation Voltage 1.6V
Test Condition 400V, 10A, 22 Ω, 15V
Turn Off Time-Nom (toff) 131 ns
Gate Charge 21nC
Td (on/off) @ 25°C 27ns/79ns
Gate-Emitter Thr Voltage-Max 6.5V
Length 10.66mm
Radiation Hardening No
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Weight 6.000006g
Operating Temperature -55°C~175°C TJ
Published 2006
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Subcategory Insulated Gate BIP Transistors
Number of Elements 1
Power Dissipation 101W
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.91V
Reverse Recovery Time 62 ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 43 ns
Vce(on) (Max) @ Vge, Ic 1.91V @ 15V, 10A
IGBT Type Trench
Current - Collector Pulsed (Icm) 40A
Switching Energy 29μJ (on), 200μJ (off)
Height 9.02mm
Width 4.82mm
REACH SVHC No SVHC
Lead Free Lead Free
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IRGB4064DPBF Documents

Download datasheets and manufacturer documentation for IRGB4064DPBF

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