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IRGS10B60KDPBF Tech Specifications

IRGS10B60KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2012
Part Status Obsolete
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Voltage - Rated DC 600V
Terminal Form GULL WING
Current Rating 22A
Base Part Number IRGS10B60KDPBF
Number of Elements 1
Power Dissipation 156W
Input Type Standard
Rise Time 20ns
Collector Emitter Voltage (VCEO) 2.2V
Reverse Recovery Time 90 ns
Collector Emitter Saturation Voltage 1.8V
Test Condition 400V, 10A, 47 Ω, 15V
Turn Off Time-Nom (toff) 276 ns
Gate Charge 38nC
Td (on/off) @ 25°C 30ns/230ns
Gate-Emitter Voltage-Max 20V
Height 4.699mm
Width 9.652mm
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 156W
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Element Configuration Single
Case Connection COLLECTOR
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Max Collector Current 22A
Collector Emitter Breakdown Voltage 600V
Turn On Time 50 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 10A
IGBT Type NPT
Current - Collector Pulsed (Icm) 44A
Switching Energy 140μJ (on), 250μJ (off)
Gate-Emitter Thr Voltage-Max 5.5V
Length 10.668mm
Radiation Hardening No
Lead Free Lead Free
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IRGS10B60KDPBF Documents

Download datasheets and manufacturer documentation for IRGS10B60KDPBF

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