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IRGS10B60KDTRRP Tech Specifications

IRGS10B60KDTRRP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2013
Part Status Last Time Buy
Number of Terminations 2
Max Power Dissipation 156W
Peak Reflow Temperature (Cel) 260
Base Part Number IRGS10B60KDPBF
Number of Elements 1
Case Connection COLLECTOR
Power - Max 156W
Polarity/Channel Type N-CHANNEL
Max Collector Current 22A
Collector Emitter Breakdown Voltage 600V
Test Condition 400V, 10A, 47 Ω, 15V
Turn Off Time-Nom (toff) 276 ns
Gate Charge 38nC
Td (on/off) @ 25°C 30ns/230ns
Radiation Hardening No
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Element Configuration Single
Input Type Standard
Transistor Application MOTOR CONTROL
Collector Emitter Voltage (VCEO) 2.2V
Reverse Recovery Time 90 ns
Turn On Time 50 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 10A
IGBT Type NPT
Current - Collector Pulsed (Icm) 44A
Switching Energy 140μJ (on), 250μJ (off)
RoHS Status ROHS3 Compliant
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IRGS10B60KDTRRP Documents

Download datasheets and manufacturer documentation for IRGS10B60KDTRRP

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