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IRGSL30B60KPBF Tech Specifications

IGBT 600V 78A 370W TO262

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 11 Weeks
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Peak Reflow Temperature (Cel) 260
Number of Elements 1
Power Dissipation 370W
Input Type Standard
Polarity/Channel Type N-CHANNEL
Max Collector Current 78A
Collector Emitter Saturation Voltage 2.35V
Test Condition 400V, 30A, 10 Ω, 15V
Turn Off Time-Nom (toff) 237 ns
Gate Charge 102nC
Td (on/off) @ 25°C 46ns/185ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 42ns
Length 10.668mm
Radiation Hardening No
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Weight 2.084002g
Operating Temperature -55°C~175°C TJ
Published 2005
Part Status Obsolete
Number of Terminations 3
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Max Power Dissipation 370W
[email protected] Reflow Temperature-Max (s) 30
Element Configuration Single
Case Connection COLLECTOR
Transistor Application MOTOR CONTROL
Collector Emitter Voltage (VCEO) 2.35V
Collector Emitter Breakdown Voltage 600V
Turn On Time 74 ns
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 30A
IGBT Type NPT
Current - Collector Pulsed (Icm) 120A
Switching Energy 350μJ (on), 825μJ (off)
Gate-Emitter Thr Voltage-Max 5.5V
Height 9.652mm
Width 4.826mm
RoHS Status RoHS Compliant
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