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SPA08N80C3XKSA1 Tech Specifications

SPA08N80C3XKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2005
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Additional Feature AVALANCHE RATED, HIGH VOLTAGE
Technology MOSFET (Metal Oxide)
Current Rating 8A
Number of Elements 1
Power Dissipation-Max 40W Tc
Power Dissipation 40W
Turn On Delay Time 25 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.9V @ 470μA
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 7 ns
Continuous Drain Current (ID) 8A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 8A
Pulsed Drain Current-Max (IDM) 24A
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3 Full Pack
Transistor Element Material SILICON
Packaging Tube
Series CoolMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Voltage - Rated DC 800V
Terminal Position SINGLE
Pin Count 3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 650m Ω @ 5.1A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 8A Tc
Rise Time 15ns
Vgs (Max) ±20V
Turn-Off Delay Time 65 ns
JEDEC-95 Code TO-220AB
Max Dual Supply Voltage 800V
Drain-source On Resistance-Max 0.65Ohm
Radiation Hardening No
Lead Free Lead Free
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SPA08N80C3XKSA1 Documents

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