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SCT2H12NZGC11 Tech Specifications

MOSFET N-CH 1700V 3.7A

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer LAPIS Semiconductor
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 4V @ 900µA
Technology SiCFET (Silicon Carbide)
Rds On (Max) @ Id, Vgs 1.5 Ohm @ 1.1A, 18V
Packaging Tube
Operating Temperature 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 184pF @ 800V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 18V
Current - Continuous Drain (Id) @ 25°C 3.7A (Tc)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) +22V, -6V
Supplier Device Package TO-3PFM
Power Dissipation (Max) 35W (Tc)
Package / Case TO-3PFM, SC-93-3
Mounting Type Through Hole
Gate Charge (Qg) (Max) @ Vgs 14nC @ 18V
FET Feature -
Drain to Source Voltage (Vdss) 1700V (1.7kV)
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SCT2H12NZGC11 Documents

Download datasheets and manufacturer documentation for SCT2H12NZGC11

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