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SCT2H12NZGC11 Tech Specifications

MOSFET N-CH 1700V 3.7A

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 30 Weeks
Mounting Type Through Hole
Number of Pins 3
Packaging Tube
Part Status Active
Number of Terminations 3
Terminal Position SINGLE
Reach Compliance Code not_compliant
Number of Elements 1
Number of Channels 1
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.5 Ω @ 1.1A, 18V
Input Capacitance (Ciss) (Max) @ Vds 184pF @ 800V
Gate Charge (Qg) (Max) @ Vgs 14nC @ 18V
Drive Voltage (Max Rds On,Min Rds On) 18V
Turn-Off Delay Time 35 ns
Threshold Voltage 2.8V
Drain to Source Breakdown Voltage 1.7kV
Max Junction Temperature (Tj) 175°C
REACH SVHC Unknown
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-3PFM, SC-93-3
Operating Temperature 175°C TJ
Published 2014
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology SiCFET (Silicon Carbide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 35W Tc
Power Dissipation 35W
Turn On Delay Time 16 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 900μA
Current - Continuous Drain (Id) @ 25°C 3.7A Tc
Drain to Source Voltage (Vdss) 1700V
Vgs (Max) +22V, -6V
Continuous Drain Current (ID) 3.7A
Gate to Source Voltage (Vgs) 22V
Pulsed Drain Current-Max (IDM) 9.2A
Height 26.5mm
RoHS Status ROHS3 Compliant
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SCT2H12NZGC11 Documents

Download datasheets and manufacturer documentation for SCT2H12NZGC11

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