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A2V09H525-04NR6 Tech Specifications

AIRFAST RF LDMOS WIDEBAND INTEGR

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
Manufacturer NXP Semiconductors / Freescale
Factory Lead Time 3 Weeks
Voltage - Test 48V
Transistor Type LDMOS
Power - Output 120W
Other Names 935330045528
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Frequency 720MHz ~ 960MHz
Current Rating 10µA
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Voltage - Rated 105V
Supplier Device Package OM-1230-4L
Package / Case OM-1230-4L
Noise Figure -
Gain 18.9dB
Detailed Description RF Mosfet LDMOS 48V 688mA 720MHz ~ 960MHz 18.9dB 120W OM-1230-4L
Current - Test 688mA
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A2V09H525-04NR6 Documents

Download datasheets and manufacturer documentation for A2V09H525-04NR6

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The following parts include  'A2V09' 

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A2V09H525-04NR6 NXP USA Inc. RF MOSFETs Transistors

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