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DRA5114E0L Tech Specifications

TRANS PREBIAS PNP 150MW SMINI3

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer Panasonic
Factory Lead Time 3 Weeks
Voltage - Collector Emitter Breakdown (Max) 50V
Transistor Type PNP - Pre-Biased
Resistor - Emitter Base (R2) (Ohms) 10k
Power - Max 150mW
Package / Case SC-85
Frequency - Transition -
Current - Collector Cutoff (Max) 500nA
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vce Saturation (Max) @ Ib, Ic 250mV @ 500µA, 10mA
Supplier Device Package SMini3-F2-B
Resistor - Base (R1) (Ohms) 10k
Packaging Tape & Reel (TR)
Mounting Type Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V
Current - Collector (Ic) (Max) 100mA
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DRA5114E0L Documents

Download datasheets and manufacturer documentation for DRA5114E0L

  • Datasheets

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