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MIEB100W1200TEH Tech Specifications

IGBT MODULE 1200V 183A HEX

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Manufacturer IXYS Corporation
Factory Lead Time 3 Weeks
Voltage - Collector Emitter Breakdown (Max) 1200V
Supplier Device Package E3
Package / Case E3
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 7.43nF @ 25V
IGBT Type -
Current - Collector (Ic) (Max) 183A
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 100A
Power - Max 630W
Operating Temperature -40°C ~ 125°C (TJ)
Mounting Type Chassis Mount
Input Standard
Current - Collector Cutoff (Max) 300µA
Configuration Three Phase Inverter
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MIEB100W1200TEH Documents

Download datasheets and manufacturer documentation for MIEB100W1200TEH

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