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SIHB12N50E-GE3 Tech Specifications

MOSFET N-CH 500V 10.5A TO-263

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer Electro-Films (EFI) / Vishay
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 4V @ 250µA
Technology MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs 380 mOhm @ 6A, 10V
Packaging Bulk
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 886pF @ 100V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V
Detailed Description N-Channel 500V 10.5A (Tc) 114W (Tc) Surface Mount D²PAK (TO-263)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±30V
Supplier Device Package D²PAK (TO-263)
Power Dissipation (Max) 114W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 10.5A (Tc)
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SIHB12N50E-GE3 Documents

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SIHB12N50E-GE3 brand manufacturers: Electro-Films (EFI) / Vishay, Bonchip stock, SIHB12N50E-GE3 reference price. SIHB12N50E-GE3 parameters, SIHB12N50E-GE3 Datasheet PDF and pin diagram description download.You can use the SIHB12N50E-GE3 Pluggable Connectors, DSP Datesheet PDF, find SIHB12N50E-GE3 pin diagram and circuit diagram and usage method of function, SIHB12N50E-GE3 electronics tutorials.You can download from the Bonchip.
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