SIRA52DP-T1-RE3 Tech Specifications

MOSFET N-CH 40V 60A POWERPAKSO-8

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer Electro-Films (EFI) / Vishay
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2.4V @ 250µA
Technology MOSFET (Metal Oxide)
Series TrenchFET® Gen IV
Power Dissipation (Max) 48W (Tc)
Package / Case PowerPAK® SO-8
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) +20V, -16V
Supplier Device Package PowerPAK® SO-8
Rds On (Max) @ Id, Vgs 1.7 mOhm @ 15A, 10V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 7150pF @ 20V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Detailed Description N-Channel 40V 60A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8
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SIRA52DP-T1-RE3 brand manufacturers: Electro-Films (EFI) / Vishay, Bonchip stock, SIRA52DP-T1-RE3 reference price. SIRA52DP-T1-RE3 parameters, SIRA52DP-T1-RE3 Datasheet PDF and pin diagram description download.You can use the SIRA52DP-T1-RE3 Pluggable Connectors, DSP Datesheet PDF, find SIRA52DP-T1-RE3 pin diagram and circuit diagram and usage method of function, SIRA52DP-T1-RE3 electronics tutorials.You can download from the Bonchip.
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