SIZ998DT-T1-GE3 Tech Specifications

MOSFET 2 N-CH 30V 8-POWERPAIR

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Manufacturer Electro-Films (EFI) / Vishay
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2.2V @ 250µA
Series TrenchFET®
Power - Max 20.2W, 32.9W
Package / Case 8-PowerWDFN
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 930pF @ 15V, 2620pF @ 15V
FET Type 2 N-Channel (Dual), Schottky
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 20A (Tc), 60A (Tc)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Supplier Device Package 8-PowerPair®
Rds On (Max) @ Id, Vgs 6.7 mOhm @ 15A, 10V, 2.8 mOhm @ 19A, 10V
Packaging Tape & Reel (TR)
Other Names SIZ998DT-T1-GE3-ND SIZ998DT-T1-GE3TR
Mounting Type Surface Mount
Manufacturer Standard Lead Time 32 Weeks
Gate Charge (Qg) (Max) @ Vgs 8.1nC @ 4.5V, 19.8nC @ 4.5V
FET Feature Standard
Detailed Description Mosfet Array 2 N-Channel (Dual), Schottky 30V 20A (Tc), 60A (Tc) 20.2W, 32.9W Surface Mount 8-PowerPair®
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