2N5550RLRA Tech Specifications

2N5550RLRA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Operating Temperature -55°C~150°C TJ
Published 2006
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Max Power Dissipation 625mW
Peak Reflow Temperature (Cel) 240
Current Rating 600mA
Base Part Number 2N5550
JESD-30 Code O-PBCY-T3
Number of Elements 1
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 250mV
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 50mA
Transition Frequency 100MHz
Collector Base Voltage (VCBO) 160V
hFE Min 60
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e0
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.21.00.95
Voltage - Rated DC 140V
Terminal Position BOTTOM
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) 30
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Gain Bandwidth Product 300MHz
Transistor Type NPN
Max Collector Current 600mA
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 140V
Collector Emitter Saturation Voltage 250mV
Emitter Base Voltage (VEBO) 6V
RoHS Status Non-RoHS Compliant
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2N5550RLRA Documents

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