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2N5551G Tech Specifications

2N5551G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Mounting Type Through Hole
Surface Mount NO
Weight 4.535924g
Operating Temperature -55°C~150°C TJ
Published 2001
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 625mW
Peak Reflow Temperature (Cel) 260
Frequency 300MHz
Base Part Number 2N5551
Number of Elements 1
Power Dissipation 625mW
Gain Bandwidth Product 300MHz
Transistor Type NPN
Max Collector Current 600mA
Current - Collector Cutoff (Max) 50nA ICBO
Collector Emitter Breakdown Voltage 160V
Collector Emitter Saturation Voltage 250mV
Emitter Base Voltage (VEBO) 6V
Height 5.33mm
Width 4.19mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Copper, Silver, Tin
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Transistor Element Material SILICON
Packaging Bulk
JESD-609 Code e1
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Voltage - Rated DC 160V
Terminal Position BOTTOM
Current Rating 600mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Element Configuration Single
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 160V
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Transition Frequency 100MHz
Collector Base Voltage (VCBO) 180V
hFE Min 80
Length 5.2mm
Radiation Hardening No
RoHS Status RoHS Compliant
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2N5551G Documents

Download datasheets and manufacturer documentation for 2N5551G

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