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2SD1207T-AE Tech Specifications

2SD1207T-AE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.29.00.75
Terminal Position BOTTOM
Pin Count 3
Element Configuration Single
Gain Bandwidth Product 150MHz
Transistor Type NPN
Max Collector Current 2A
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 50V
Transition Frequency 150MHz
Max Breakdown Voltage 50V
Emitter Base Voltage (VEBO) 6V
Height 8.5mm
Width 4.7mm
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Operating Temperature 150°C TJ
Published 2011
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Max Power Dissipation 1W
Base Part Number 2SD1207
Number of Elements 1
Transistor Application SWITCHING
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 2V
Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 1A
Max Frequency 150MHz
Collector Emitter Saturation Voltage 150mV
Collector Base Voltage (VCBO) 60V
hFE Min 140
Length 6mm
RoHS Status RoHS Compliant
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2SD1207T-AE Documents

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