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DTA115EM3T5G Tech Specifications

TRANS PREBIAS PNP 260MW SOT723

Product Attribute Attribute Value
Category Discrete Semiconductors / Pre-Biased BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Mounting Type Surface Mount
Surface Mount YES
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Min Operating Temperature -55°C
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 260mW
Terminal Form FLAT
Current Rating -100mA
Base Part Number DTA115
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Transistor Type PNP - Pre-Biased
Max Collector Current 100mA
Current - Collector Cutoff (Max) 500nA
Collector Emitter Breakdown Voltage 50V
hFE Min 80
Continuous Collector Current 100mA
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Package / Case SOT-723
Number of Pins 3
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Voltage - Rated DC -50V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Polarity PNP
Power Dissipation 260mW
Halogen Free Halogen Free
Collector Emitter Voltage (VCEO) 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Max Breakdown Voltage 50V
Resistor - Base (R1) 100 k Ω
Resistor - Emitter Base (R2) 100 k Ω
RoHS Status ROHS3 Compliant
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