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FDPF8N60ZUT Tech Specifications

MOSFET N-CH 600V TO-220F-3

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 9 Weeks
Mount Through Hole
Package / Case TO-220-3 Full Pack
Weight 2.27g
Operating Temperature -55°C~150°C TJ
Published 2013
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 34.5W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.35 Ω @ 3.25A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1265pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 35 ns
Continuous Drain Current (ID) 6.5A
JEDEC-95 Code TO-220AB
Drain to Source Breakdown Voltage 600V
Avalanche Energy Rating (Eas) 420 mJ
Length 10.36mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 21 hours ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Series UniFET™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Number of Elements 1
Element Configuration Single
Power Dissipation 34.5W
Turn On Delay Time 20 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 6.5A Tc
Rise Time 30ns
Vgs (Max) ±30V
Turn-Off Delay Time 55 ns
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 26A
Height 16.07mm
Width 4.9mm
REACH SVHC No SVHC
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