FGB20N60SFD-F085 Tech Specifications

IGBT 600V 40A 208W D2PAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 7 Weeks
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Max Power Dissipation 208W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Rise Time-Max 21ns
Case Connection COLLECTOR
Power - Max 208W
Polarity/Channel Type N-CHANNEL
Max Collector Current 40A
Collector Emitter Breakdown Voltage 600V
Max Breakdown Voltage 600V
Test Condition 400V, 20A, 10 Ω, 15V
Turn Off Time-Nom (toff) 123 ns
Gate Charge 63nC
Td (on/off) @ 25°C 10ns/90ns
Gate-Emitter Voltage-Max 20V
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight 1.31247g
Operating Temperature -55°C~150°C TJ
Published 2013
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Subcategory Insulated Gate BIP Transistors
Terminal Form GULL WING
Reach Compliance Code not_compliant
Base Part Number FGB20N60
Number of Elements 1
Element Configuration Single
Input Type Standard
Transistor Application POWER CONTROL
Collector Emitter Voltage (VCEO) 600V
Reverse Recovery Time 111 ns
Collector Emitter Saturation Voltage 2.4V
Turn On Time 28 ns
Vce(on) (Max) @ Vge, Ic 2.85V @ 15V, 20A
IGBT Type Field Stop
Current - Collector Pulsed (Icm) 60A
Switching Energy 310μJ (on), 130μJ (off)
Gate-Emitter Thr Voltage-Max 6.5V
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