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FGB20N60SFD Tech Specifications

FGB20N60SFD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 5 Weeks
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight 1.31247g
Operating Temperature -55°C~150°C TJ
Published 2013
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Element Configuration Single
Case Connection COLLECTOR
Power - Max 208W
Polarity/Channel Type N-CHANNEL
Max Collector Current 40A
Collector Emitter Breakdown Voltage 600V
Max Breakdown Voltage 600V
Test Condition 400V, 20A, 10 Ω, 15V
Turn Off Time-Nom (toff) 123 ns
Gate Charge 65nC
Td (on/off) @ 25°C 13ns/90ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 48ns
Length 10.67mm
Radiation Hardening No
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Max Power Dissipation 208W
Base Part Number FGB20N60
Number of Elements 1
Power Dissipation 83W
Input Type Standard
Transistor Application POWER CONTROL
Collector Emitter Voltage (VCEO) 600V
Reverse Recovery Time 34 ns
Collector Emitter Saturation Voltage 2.8V
Turn On Time 28 ns
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 20A
IGBT Type Field Stop
Current - Collector Pulsed (Icm) 60A
Switching Energy 370μJ (on), 160μJ (off)
Gate-Emitter Thr Voltage-Max 6.5V
Height 4.83mm
Width 9.65mm
RoHS Status ROHS3 Compliant
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FGB20N60SFD Documents

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