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FGH75T65SHD-F155 Tech Specifications

FGH75T65 Series 650 V 75 A Through Hole Field Stop Trench IGBT - TO-247-3

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 455W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Input Type Standard
Transistor Application POWER CONTROL
Collector Emitter Voltage (VCEO) 2.1V
Reverse Recovery Time 43.4 ns
Collector Emitter Breakdown Voltage 650V
Test Condition 400V, 75A, 3 Ω, 15V
Turn Off Time-Nom (toff) 100 ns
Gate Charge 123nC
Td (on/off) @ 25°C 28ns/80ns
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Through Hole
Weight 6.39g
Operating Temperature -55°C~175°C TJ
Part Status Active
Number of Terminations 3
HTS Code 8541.29.00.95
Terminal Position SINGLE
Reach Compliance Code not_compliant
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Power - Max 455W
Polarity/Channel Type N-CHANNEL
Max Collector Current 150A
JEDEC-95 Code TO-247AB
Turn On Time 84.8 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 225A
Switching Energy 2.4mJ (on), 720μJ (off)
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