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FGH75T65UPD-F085 Tech Specifications

IGBT 650V 150A 375W TO-247AB

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-247-3
Weight 6.39g
Operating Temperature -55°C~175°C TJ
Series Automotive, AEC-Q101
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Max Power Dissipation 375W
Reach Compliance Code not_compliant
Number of Elements 1
Element Configuration Single
Input Type Standard
Transistor Application POWER CONTROL
Collector Emitter Voltage (VCEO) 650V
Reverse Recovery Time 85 ns
Collector Emitter Breakdown Voltage 650V
Turn On Time 87 ns
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 75A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 225A
Switching Energy 2.85mJ (on), 1.2mJ (off)
Gate-Emitter Thr Voltage-Max 7.5V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Not For New Designs
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Rise Time-Max 71ns
Case Connection COLLECTOR
Power - Max 375W
Polarity/Channel Type N-CHANNEL
Max Collector Current 150A
JEDEC-95 Code TO-247AB
Collector Emitter Saturation Voltage 2.21V
Test Condition 400V, 75A, 3 Ω, 15V
Turn Off Time-Nom (toff) 197 ns
Gate Charge 578nC
Td (on/off) @ 25°C 32ns/166ns
Gate-Emitter Voltage-Max 20V
RoHS Status ROHS3 Compliant
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