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FJAF4310OTU Tech Specifications

FJAF4310OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Mount Through Hole
Package / Case TO-3P-3 Full Pack
Weight 6.962g
Operating Temperature 150°C TJ
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC 140V
Current Rating 10A
Number of Elements 1
Power Dissipation 80W
Gain Bandwidth Product 30MHz
Transistor Type NPN
Max Collector Current 10A
Current - Collector Cutoff (Max) 10μA ICBO
Collector Emitter Breakdown Voltage 140V
Collector Emitter Saturation Voltage 500mV
Emitter Base Voltage (VEBO) 6V
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 weeks ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Part Status Active
Number of Terminations 3
Subcategory Other Transistors
Max Power Dissipation 80W
Frequency 30MHz
Element Configuration Single
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 140V
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 3A 4V
Vce Saturation (Max) @ Ib, Ic 500mV @ 500mA, 5A
Transition Frequency 30MHz
Collector Base Voltage (VCBO) 200V
hFE Min 50
RoHS Status ROHS3 Compliant
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FJAF4310OTU Documents

Download datasheets and manufacturer documentation for FJAF4310OTU

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