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FQB7P20TM-F085 Tech Specifications

MOSFET P-CH 200V 7.3A D2PAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 6 Weeks
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 3.13W Ta 90W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 7.3A Tc
Drain to Source Voltage (Vdss) 200V
Vgs (Max) ±30V
Drain-source On Resistance-Max 0.69Ohm
DS Breakdown Voltage-Min 200V
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Series Automotive, AEC-Q101, QFET®
Part Status Not For New Designs
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 245
[email protected] Reflow Temperature-Max (s) 30
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Rds On (Max) @ Id, Vgs 690m Ω @ 3.65A, 10V
Input Capacitance (Ciss) (Max) @ Vds 770pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain Current-Max (Abs) (ID) 7.3A
Pulsed Drain Current-Max (IDM) 29.2A
Avalanche Energy Rating (Eas) 570 mJ
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