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FQD17P06TM Tech Specifications

FQD17P06TM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Current Rating -12A
Number of Elements 1
Element Configuration Single
Power Dissipation 2.5W
Turn On Delay Time 13 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 12A Tc
Rise Time 100ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 60 ns
Continuous Drain Current (ID) 12mA
Gate to Source Voltage (Vgs) 25V
Pulsed Drain Current-Max (IDM) 48A
Length 6.73mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 260.37mg
Operating Temperature -55°C~150°C TJ
Published 2014
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Resistance 135mOhm
Voltage - Rated DC -60V
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 2.5W Ta 44W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Rds On (Max) @ Id, Vgs 135m Ω @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±25V
Turn-Off Delay Time 22 ns
Threshold Voltage -4V
Drain to Source Breakdown Voltage -60V
Height 2.39mm
Width 6.22mm
REACH SVHC No SVHC
Lead Free Lead Free
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FQD17P06TM Documents

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