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FQPF2N80YDTU Tech Specifications

MOSFET N-CH 800V TO-220-3

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Through Hole
Package / Case TO-220-3 Full Pack, Formed Leads
Weight 2.565g
Packaging Tube
JESD-609 Code e3
Part Status Active
ECCN Code EAR99
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 35W Tc
Turn On Delay Time 12 ns
Rds On (Max) @ Id, Vgs 6.3 Ω @ 750mA, 10V
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 28 ns
Continuous Drain Current (ID) 1.5A
Drain to Source Breakdown Voltage 800V
Length 10.36mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 21 hours ago)
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Reach Compliance Code not_compliant
Number of Channels 1
Element Configuration Single
FET Type N-Channel
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 1.5A Tc
Rise Time 30ns
Vgs (Max) ±30V
Turn-Off Delay Time 25 ns
Gate to Source Voltage (Vgs) 30V
Height 16.07mm
Width 4.9mm
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