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HGTG12N60C3D Tech Specifications

HGTG12N60C3D datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 36 Weeks
Mount Through Hole
Package / Case TO-247-3
Weight 6.39g
Operating Temperature -40°C~150°C TJ
Published 1997
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 600V
Current Rating 24A
Number of Elements 1
Power Dissipation 104W
Transistor Application POWER CONTROL
Collector Emitter Voltage (VCEO) 600V
Reverse Recovery Time 42 ns
Collector Emitter Saturation Voltage 1.65V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 15A
Gate Charge 48nC
Switching Energy 380μJ (on), 900μJ (off)
Length 15.87mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Not For New Designs
Number of Terminations 3
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Max Power Dissipation 104W
Base Part Number HGTG12N60
Element Configuration Single
Input Type Standard
Polarity/Channel Type N-CHANNEL
Max Collector Current 24A
Collector Emitter Breakdown Voltage 600V
Turn On Time 30 ns
Turn Off Time-Nom (toff) 480 ns
Current - Collector Pulsed (Icm) 96A
Height 20.82mm
Width 4.82mm
REACH SVHC No SVHC
Lead Free Lead Free
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HGTG12N60C3D Documents

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