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HGTP12N60C3D Tech Specifications

HGTP12N60C3D datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 5 Weeks
Mount Through Hole
Package / Case TO-220-3
Weight 1.8g
Operating Temperature -40°C~150°C TJ
Published 2011
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 600V
Current Rating 24A
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Turn On Delay Time 28 μs
Turn-Off Delay Time 270 ns
Max Collector Current 24A
JEDEC-95 Code TO-220AB
Collector Emitter Saturation Voltage 1.65V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 15A
Gate Charge 48nC
Switching Energy 380μJ (on), 900μJ (off)
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Not For New Designs
Number of Terminations 3
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Max Power Dissipation 104W
Base Part Number HGTP12N60
Polarity NPN
Power Dissipation 104W
Input Type Standard
Transistor Application MOTOR CONTROL
Collector Emitter Voltage (VCEO) 600V
Reverse Recovery Time 40 ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 48 ns
Turn Off Time-Nom (toff) 480 ns
Current - Collector Pulsed (Icm) 96A
Radiation Hardening No
RoHS Status ROHS3 Compliant
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