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MJE5852G Tech Specifications

MJE5852G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Contact Plating Tin
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Series SWITCHMODE™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC -400V
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Element Configuration Single
Case Connection COLLECTOR
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 400V
DC Current Gain (hFE) (Min) @ Ic, Vce 5 @ 5A 5V
Vce Saturation (Max) @ Ib, Ic 5V @ 3A, 8A
Collector Emitter Saturation Voltage 2V
Emitter Base Voltage (VEBO) 6V
Height 9.28mm
Width 4.82mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Through Hole
Surface Mount NO
Weight 4.535924g
Operating Temperature -65°C~150°C TJ
Published 2004
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Subcategory Other Transistors
Max Power Dissipation 80W
Current Rating -8A
Base Part Number MJE5852
Number of Elements 1
Power Dissipation 80W
Transistor Application SWITCHING
Transistor Type PNP
Max Collector Current 8A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 400V
Collector Base Voltage (VCBO) 450V
hFE Min 15
Length 10.28mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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MJE5852G Documents

Download datasheets and manufacturer documentation for MJE5852G

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