MMBT2222ALT1G Tech Specifications

MMBT2222ALT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Contact Plating Tin
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2006
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Type General Purpose
Voltage - Rated DC 40V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Frequency 300MHz
Base Part Number MMBT2222A
Number of Elements 1
Power Dissipation 225mW
Gain Bandwidth Product 300MHz
Collector Emitter Voltage (VCEO) 40V
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Transition Frequency 300MHz
Max Breakdown Voltage 40V
Emitter Base Voltage (VEBO) 6V
Max Junction Temperature (Tj) 150°C
Height 1.11mm
Width 1.3mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 300mW
Terminal Form GULL WING
Current Rating 600mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Element Configuration Single
Transistor Application SWITCHING
Transistor Type NPN
Max Collector Current 600mA
Current - Collector Cutoff (Max) 10nA ICBO
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage 300mV
Collector Base Voltage (VCBO) 75V
hFE Min 100
Turn Off Time-Max (toff) 285ns
Length 2.9mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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MMBT2222ALT1G Documents

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