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MMBT2484LT1G Tech Specifications

MMBT2484LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Contact Plating Tin
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC 60V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Element Configuration Single
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 60V
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 1mA 5V
Vce Saturation (Max) @ Ib, Ic 350mV @ 100μA, 1mA
Max Frequency 1MHz
Max Breakdown Voltage 60V
Emitter Base Voltage (VEBO) 6V
Height 1.01mm
Width 1.4mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Subcategory Other Transistors
Max Power Dissipation 225mW
Terminal Form GULL WING
Current Rating 100mA
Base Part Number MMBT2484
Number of Elements 1
Power Dissipation 300mW
Transistor Type NPN
Max Collector Current 100mA
Current - Collector Cutoff (Max) 10nA ICBO
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage 350mV
Collector Base Voltage (VCBO) 60V
hFE Min 250
Length 3.04mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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MMBT2484LT1G Documents

Download datasheets and manufacturer documentation for MMBT2484LT1G

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