MMDF1N05ER2 Tech Specifications

MOSFET 2N-CH 50V 2A 8-SOIC

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status OBSOLETE (Last Updated: 2 weeks ago)
Mounting Type Surface Mount
Number of Pins 8
Published 2006
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin/Lead (Sn/Pb)
Min Operating Temperature -55°C
Subcategory FET General Purpose Power
Max Power Dissipation 2W
Peak Reflow Temperature (Cel) 240
Current Rating 1A
Base Part Number MMDF1N05E
Qualification Status Not Qualified
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Power Dissipation 2W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 12.5nC @ 10V
Fall Time (Typ) 25 ns
Continuous Drain Current (ID) 2A
Drain Current-Max (Abs) (ID) 2A
Drain to Source Breakdown Voltage 50V
Avalanche Energy Rating (Eas) 300 mJ
FET Feature Logic Level Gate
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Packaging Cut Tape (CT)
JESD-609 Code e0
Part Status Obsolete
Number of Terminations 8
Max Operating Temperature 150°C
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC 50V
Terminal Form GULL WING
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 300m Ω @ 1.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 25V
Rise Time 30ns
Turn-Off Delay Time 40 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.3Ohm
Pulsed Drain Current-Max (IDM) 10A
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status Non-RoHS Compliant
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MMDF1N05ER2 Documents

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