MMDF1N05ER2G Tech Specifications

MOSFET NFET SO8D 50V 200mA 300mOhm

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status OBSOLETE (Last Updated: 1 day ago)
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation 2W
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 8
Element Configuration Dual
Power Dissipation 2W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 300m Ω @ 1.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 25V
Rise Time 30ns
Turn-Off Delay Time 40 ns
Threshold Voltage 3V
Drain Current-Max (Abs) (ID) 2A
Pulsed Drain Current-Max (IDM) 10A
FET Technology METAL-OXIDE SEMICONDUCTOR
Height 1.5mm
Width 4mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 8
Resistance 300MOhm
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC 50V
Terminal Form GULL WING
Current Rating 1A
Base Part Number MMDF1N05E
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 20 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 12.5nC @ 10V
Fall Time (Typ) 25 ns
Continuous Drain Current (ID) 2A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 50V
Avalanche Energy Rating (Eas) 300 mJ
FET Feature Logic Level Gate
Length 5mm
Radiation Hardening No
RoHS Status RoHS Compliant
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