NDD02N40-1G Tech Specifications

MOSFET NFET DPAK 400V 1.7A 5.5OH

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PSIP-T3
Power Dissipation-Max 39W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 121pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 4 ns
Continuous Drain Current (ID) 1.7A
Drain-source On Resistance-Max 0.0055Ohm
Pulsed Drain Current-Max (IDM) 6.9A
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status LAST SHIPMENTS (Last Updated: 19 hours ago)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 4
Operating Temperature -55°C~150°C TJ
Published 2010
Pbfree Code yes
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Subcategory FET General Purpose Power
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 39W
Turn On Delay Time 5 ns
Rds On (Max) @ Id, Vgs 5.5 Ω @ 220mA, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 1.7A Tc
Rise Time 7ns
Vgs (Max) ±20V
Turn-Off Delay Time 14 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 400V
Radiation Hardening No
Lead Free Lead Free
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