NDD02N60Z-1G Tech Specifications

MOSFET NFET IPAK 600V 2.2A 4.8R

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 28 Weeks
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Resistance 4.8Ohm
Subcategory FET General Purpose Powers
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 57W
Turn On Delay Time 9 ns
Rds On (Max) @ Id, Vgs 4.8 Ω @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds 274pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 10.1nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 7 ns
Continuous Drain Current (ID) 2.2A
Drain to Source Breakdown Voltage 600V
Height 7.62mm
Width 2.38mm
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 4
Operating Temperature -55°C~150°C TJ
Published 2010
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PSIP-T3
Power Dissipation-Max 57W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 4.5V @ 50μA
Current - Continuous Drain (Id) @ 25°C 2.2A Tc
Rise Time 7ns
Vgs (Max) ±30V
Turn-Off Delay Time 15 ns
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 9A
Length 6.73mm
Radiation Hardening No
Lead Free Lead Free
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